4 inch silicon wafer

Prime wafers in Si 1 side polished

Part details

Material :

Silicon CZ orientation <100>, type P

Manufacturing process :

Si CZ crystal ingot growing / cutting / polishing / ultrasound cleaning / packaging

Manufacturing is conducted in a clean room, to stay dust free all along.

Dimensions:

D4 inch (100mm) +/- 0.5mm

Thickness 525µm (+/- 25µm)

Shape :

Flat round with a flat cut

Specifications :

TTV better than 10 µm

BOW better than 40 µm

Resistivity 8-12 ohm.cm

Optical treatment :

None

Class 100 laser engraving

Usage :

research in lasers