N-type silicon wafer
N-doped Si thin plate, both side polished
Part details
Material :
High resistivity N-type Silicon FZ grown doped with Nitrogen
Resistivity 10 000 ohm.cm
Orientation : <111>
Manufacturing process :
- Crystal growing
- Cutting in thin plates
- Double side polishing
- Dicing
Dimensions:
10.5 mm x 10.5mm x 0.5 mm (500 µm) – Custom dimensions.
Shape :
Square thin plate
Optical treatment :
None
Usage :
Infrared window for stove security device’s sensor protection.
Don’t hesitate to review our guide on IR optics.
