Silicon substrate

2 inch silicon wafer, 5mm thick

Part details

Material :

Non-doped Silicon

Orientation : 100

Manufacturing process :

Crystal growth, cutting, polishing on one side.

Dimensions:

D2″ (50.8 mm +/-0.1mm) thickness 5mm +/- 0.1mm

Specifications :

TTV better than 10µm

Bow lower than 30µm

Surface quality : 60/40 s&d

Shape :

Flat disc with a flat cut

Optical treatment :

None

Usage :

Substrate for research application. Very good transmission in SWIR & MID-IR spectrum.